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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com
N08L163WC2C
Advance Information
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K x 16 bit Overview
The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs
Features
* Single Wide Power Supply Range 2.2 to 3.6 Volts * Very low standby current 2.0A at 3.0V (Typical) * Very low operating current 1.5mA at 3.0V and 1s(Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Low voltage data retention Vcc = 1.5V * Very fast output enable access time 25ns OE access time * Automatic power down to standby mode * TTL compatible three-state output driver * Ultra Low Power Sort Available
Product Family
Part Number Package Type Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.2V - 3.6V Speed Standby Current Operating Current (ISB), (Icc), Typical Typical 2 A 1.5 mA @ 1MHz
N08L163WC2CZ1
VFBGA Pb-Free
55ns
Pin Configuration
1 A B C D E F G H
LB I/O8 I/O9 VSS VCC
Pin Descriptions
3
A0 A3 A5 A17
2
OE UB I/O10 I/O11
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11
6
CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC
Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC
Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected
I/O12 DNU A14 A12 A9
I/O14 I/O13 I/O15 A18 NC A8
48 Pin VFBGA (top) 6 x 8 mm
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs A0 - A3 Word Address Decode Logic Advance Information
Address Inputs A4 - A18
Page Address Decode Logic
32K Page x 16 word x 16 bit RAM Array
Input/ Output Mux and Buffers
Word Mux
I/O0 - I/O7
I/O8 - I/O15 CE1 CE2 WE OE UB LB
Control Logic
Functional Description
CE1 H X X L L L CE2 X L X H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L1 L1 LB X X H L1 L1 L1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby2 Write3 Read Active POWER Standby Standby Standby Active Active Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 10 10 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Advance Information
Absolute Maximum Ratings
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating -0.3 to VCC+0.3 -0.3 to 4.5 500 -65 to 150 -40 to +85 260oC, 10sec Unit V V mW
o
C
oC o
C
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 s Cycle Time2 Read/Write Operating Supply Current @ fmax Maximum Standby Current Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC1 ICC2 Chip Disabled Vcc = 2.2V to 2.7V Vcc = 2.7V to 3.6V Vcc = 2.2V to 2.7V Vcc = 2.7V to 3.6V IOH = -0.1mA, Vcc = 2.2V IOH = -1.0mA, Vcc = 2.7V IOL = 0.1mA, Vcc = 2.2V IOL = 2.1mA, Vcc = 2.7V VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V -L -L -1 -1 1.5 1.5 12.0 12.0 2.0 -L 2.0 Test Conditions Min. 2.2 1.5 1.8 2.2 -0.3 -0.3 2.0 2.4 0.4 0.4 1 1 3 3 20.0 15.0 20 8 10 4 A VCC+0.3 VCC+0.3 0.6 0.8 Typ1 3.0 Max 3.6 Unit V V V V V V A A mA mA
ISB1
Maximum Data Retention Current
IDR
Vcc = 1.5V, CE Vcc - 0.2V, VIN Vcc - 0.2V or VIN 0.2V -L
A
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature 0.1VCC to 0.9 VCC 1V/ns 0.5 VCC CL = 50pF -40 to +85 oC
Advance Information
Timing
Item Read Cycle Time Address Access Time (Random Access) Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output
Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) 100us or stable at Vcc(min) 100us.
Symbol tRC tAA tCO tOE tLB, tUB tLZ tOLZ tLBZ, tUBZ tHZ tOHZ tLBHZ, tUBHZ tOH tWC tCW tAW tLBW, tUBW tWP tAS tWR tWHZ tDW tDH tOW
55 Min 55 55 55 25 55 10 5 10 20 20 20 10 55 40 40 40 40 0 0 20 25 0 10 Max
Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N08L163WC2C
NanoAmp Solutions, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC Address tAA, tOH
Advance Information
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA,
tHZ
CE1 tCO CE2 tLZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid tOHZ
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1 tCW CE2 tLBW, tUBW LB, UB tAS WE tDW High-Z Data In tWHZ Data Out High-Z tDH tWP tWR
Advance Information
Data Valid tOW
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1 (for CE2 Control, use inverted signal) LB, UB tWP WE tDW Data In tLZ Data Out tWHZ tDH tCW tAS tLBW, tUBW tWR
Data Valid
High-Z
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Data Retention Characteristics
Parameter VDR ICCDR tCDR tR Description Vcc for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Vcc = 1.5V, CE Vcc - 0.2V, VIN Vcc - 0.2V or VIN 0.2V -L 0 tRC Condition Min 1.5 10 4 Typ Max Unit V A ns ns
Advance Information
Data Retention Waveform
Data Retention Mode Vcc Vcc(min) tCDR CE1 or LB/UB or CE2 VDR 1.5V Vcc(min) tR
Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 s
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N08L163WC2C
NanoAmp Solutions, Inc. VFBGA Package
A1 BALL PAD CORNER (3) D 0.230.05 1.00 MAX 1. 0.300.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e Z
Advance Information
SD
e SE
BOTTOM VIEW
Dimensions (mm)
e = 0.75 D 60.10 E SD 80.10 0.375 SE 0.375 J 1.125 K 1.375 BALL MATRIX TYPE FULL
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N08L163WC2C
NanoAmp Solutions, Inc. Ordering Information Advance Information
N08L163WC2CX-XX X L
L = Ultra Low Power Sort I = Industrial, -40C to 85C
Temperature
55 = 55ns
Performance
Package Type
Z1 = 48-ball VFBGA Pb-Free Package
Revision History
Revision A B C Date Oct 6. 2004 Nov 9. 2004 Jan 14, 2005 Change Description Initial Advance Release General Update General Update
(c) 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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